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Objectives
This project aims at the development of a Single-Chip Radar operating in the 24 GHz frequency band. By integrating all functions on a single chip the system cost as well as the formfactor can be reduced.
Fig.1 shows the chip photography of the 24 GHz Single-Chip Radar
Results
The circuit developed in the course of this project is a fully-integrated radar frontend for the 24 GHz ISM-band in the frequency
range 24.0 GHz - 24.25 GHz. It consists of a voltage controlled oscillator (VCO), a power amplifier, a low noise amplifier (LNA),
a differential output buffer and a divide-by-16-circuit.
The chip is fabricated in the IHP SiGe:C BiCMOS technology SG25H3. The circuit is designed for the use in radar-systems and communication systems. The circuit has low power consumption, a wide tuning range and low phase noise. Fig.1 shows the block diagram of the chip.
The chip operates at a temperature range from -40°C to 95°C. The data sheet of the developed Radar Chip can be downloaded here.
Figure 2: Block Diagram of 24 GHz Single-Chip Radar
Acknowledgement
The project was supported by a grant from the Federal state of Brandenburg and the European Union (#80129368).
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